PART |
Description |
Maker |
KM23C16000CET |
16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位(2Mx8 / 1Mx16)的CMOS掩模ROM,600位(2Mx8 / 1Mx16)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
MX29LV160BXBI-70 MX29LV160TXBI-70 MX29LV160ABXBI-7 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | BGA封装| 48PIN |塑料 EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 48PIN |塑料
|
Electronic Theatre Controls, Inc. Macronix International Co., Ltd.
|
KMM5321200C2W KMM5321200C2WG |
1Mx32 DRAM SIMM (1MX16 Base)
|
Samsung semiconductor
|
67401J 67401N C67402N 67L402J 67402BJ 67401BJ 6740 |
8 bit SIPO shift register 3.3V Input to Regulated 5V Output Charge Pumps x4 Asynchronous FIFO x4异步FIFO x5 Asynchronous FIFO X5的异步FIFO
|
Pomona Electronics Electronic Theatre Controls, Inc.
|
KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
KMM5362205C2W KMM5362205C2WG |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
GS72116TP-10 GS72116TP-15 GS72116TP GS72116J-15 GS |
15ns 128K x 16 2Mb asynchronous SRAM 8ns 128K x 16 2Mb asynchronous SRAM 10ns 128K x 16 2Mb asynchronous SRAM 12ns 128K x 16 2Mb asynchronous SRAM
|
GSI[GSI Technology]
|
MX29LV160BBXBC-70G MX29LV160BBTC-90 MX29LV160BBTI- |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International
|
TC51V16165BFT-70 |
DRAM,EDO,1MX16,CMOS,TSOP,50PIN,PLASTIC From old datasheet system
|
Toshiba.
|
K3P5C1000F-DGCTC |
16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
MX29LV160AT MX29LV160T MX29LV160AB MX29LV160ATTC-7 |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|